1. Электронная библиотека БГТУ
  2. Статьи ученых БГТУ
  3. Статьи в зарубежных изданиях
Please use this identifier to cite or link to this item: https://elib.belstu.by/handle/123456789/36115
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLuhin, V.-
dc.contributor.authorZarsky, I.-
dc.contributor.authorZhucowki, P.-
dc.date.accessioned2020-10-30T08:41:15Z-
dc.date.available2020-10-30T08:41:15Z-
dc.date.issued2012-
dc.identifier.citationApplication of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties / V. Luhin, I. Zarsky, P. Zhucowki // Acta Physica Polonica A. - 2012. - Vol. 123, № 5. - P. 837-839ru
dc.identifier.urihttps://elib.belstu.by/handle/123456789/36115-
dc.description.abstractIn this paper the technology of gas sensitive semiconductor structures based on oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy. Conditions of In₂O₃ films formation with higt selectivity and sensitivity to NO₂ are established.ru
dc.format.mimetypeapplication/pdfru
dc.language.isoenru
dc.subjecttechnologyru
dc.subjectgas sensitive semiconductor structuresru
dc.subjectoxide thin filmsru
dc.subjectsputtering of indiumru
dc.subjectmagnetron sputteringru
dc.subjectby magnetronru
dc.titleApplication of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Propertiesru
dc.typeArticleru
dc.identifier.DOI10. 12693/APhysPolA.123.837-
Appears in Collections:Статьи в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
15.pdf464.47 kBAdobe PDFView/Open
Show simple item record



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.