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Please use this identifier to cite or link to this item: https://elib.belstu.by/handle/123456789/36124
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dc.contributor.authorFrantskevich, N. V.-
dc.contributor.authorFedotov, A. K.-
dc.contributor.authorFrantskevich, A. V.-
dc.contributor.authorMazanik, N. V.-
dc.date.accessioned2020-10-30T10:25:54Z-
dc.date.available2020-10-30T10:25:54Z-
dc.date.issued2014-
dc.identifier.citationMicro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface / N. V. Frantskevich [et al.] // Acta Physica Polonica A. - 2014. - Vol. 125, № 6. - P. 1332-1334ru
dc.identifier.urihttps://elib.belstu.by/handle/123456789/36124-
dc.description.abstractThe goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czocliralski Si wafers as a result of hydrogen plasma treatment. The line at ~ 4158 cm-1 corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of thisru
dc.format.mimetypeapplication/pdfru
dc.language.isoenru
dc.subjectstudy of molecular hydrogenru
dc.subjectcone-shaped defectsru
dc.subjectlaser irradiationru
dc.subjectmicro-Raman studyru
dc.titleMicro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surfaceru
dc.typeArticleru
dc.identifier.DOI10.12693/APliysPolA. 125.1332-
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